Shanghai Panmeng Electronic Materials Co., Ltd.
Products
Contact Us
  • Contact Person : Ms. Wu Maggie
  • Company Name : Shanghai Panmeng Electronic Materials Co., Ltd.
  • Tel : 86-21-3782-1572
  • Fax : 86-21-3373-4521
  • Address : Shanghai,Shanghai,Building A4,No.6638 Beisong Hwy,Songjiang District,Shanghai.
  • Country/Region : China
  • Zip : 201611

Products List
8"IC wafer

8"IC wafer

IC grade mono silicon wafer 1.dimension:3'' 4'' 5'' 6'' 8'' 2.growth method:CZ 3.Orientation:<111><100> 4.Type:N/P IC grade mono silicon wafer...
2"IC wafer

2"IC wafer

IC grade mono silicon wafer 1.dimension:2"3'' 4'' 5'' 6'' 8'' 2.growth method:CZ 3.Orientation:<111><100> 4.Type:N/P IC grade mono silicon wafer...
6"SSP

6"SSP

SSP 6" 1.Single side polished 2.High Purity 11N 3.Growth Method :CZ 4.Orientation:<111>/<110>/<100> 6"SSP...
SSP

SSP

4"SSP 1.Single side polished 2.High Purity 11N 3.Growth Method :CZ 4.Orientation:<111>/<110>/<100> 4"SSP...
12''-16'' large diameter ic grade crystal silicon ingots

12''-16'' large diameter ic grade crystal silicon ingots

12''-16'' large diameter ic grade crystal silicon ingots 1.N/P type 2.Dopant phos, As, Sb, Boron 3.Growth Method:CZ, FZ 12''-16'' large diameter ic grade crystal silicon ingots Specification:...
large diameter mono silicon ingots

large diameter mono silicon ingots

12''-16'' ic grade large diameter mono silicon ingots 1.N/P type 2.Dopant phos, As, Sb, Boron 3.Growth Method:CZ 12''-16'' ic/semi grade large diameter mono silicon ingots Specification:...
IC grade mono silicon ingots

IC grade mono silicon ingots

IC grade mono silicon ingots Grade:IC grade Groth method:CZ Size:3''-8'' Materials:Virgin Poly Silicon IC grade mono silicon ingots...
IC Ingots

IC Ingots

IC grade monocrystalline silicon ingot 1.N/P type 2.Growth Method:CZ 3.Dimension:2"3'' 4'' 5'' 6'' 8' IC grade monocrystalline silicon...
IC Round ingots

IC Round ingots

IC Round ingots 1.N/P type 2.Dopant phos, As, Sb, Boron 3.Growth Method:CZ 4.Orientation:<100>/<111>/<110>  IC Round...
9" Round ingots

9" Round ingots

9" Round ingots 1.N/P type 2.Dopant phos, As, Sb, Boron 3.Growth Method:CZ 4.Orientation:<100>  9" Round ingots Size9"Growth methodCZDiameter225±0.5mmOrientation<100>TypeN,PPurity>9N(99.9999999%)Resistivity Range<1.0...



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